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Flokal's
high temperature chemical vapor deposition (CVD)
process yields intrinsically pure pyrolytic
boron nitride (PBN). Performance PBN is the
ideal choice for furnace, electrical, microwave,
and semiconductor components. Performance PBN's
properties, its intrinsic purity, superior mechanical
strength, and thermal stability make it a superb
choice for high temperature furnace and electrical
components; microwave and semiconductor components;
and industry standardized crucibles for gallium
arsenide crystal production.
Good
thermal conductivity; high insulation resistance;
high dielectric strength over wide temperature
ranges; extremely pure; non-wetting; non-toxic;
non-reactive to most other compounds; withstands
high temperatures and rapid cooling.
Performance
PBN will not react with acids, alkalis, organic
solvents, molten metals, or graphite. Bulk impurity
levels are less than 100 parts per million with
metallic impurities less than 10 parts per million.
It withstands 1800° C in vacuum and 2000°
C in nitrogen, showing no melting point, making
it an excellent choice for furnace components
and melting vessels. Crucibles heated to 1200°
C can be plunged into liquid nitrogen without
visible damage. PBN-coated graphite heating
elements provide extremely uniform temperature
profiles for both compound and silicon semiconductor
manufacturing.
The
anisotropic conductivity of Performance PBN
improves process performance for crystal growth,
whether the growth method is Liquid Encapsulated
Czochralski (LEC), Vertical Gradient Freeze
(VGF), or Bridgman. The high purity and physical
stability of this unique material also make
it the best choice for auxiliary effusion cell
hardware use.
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