Process-Parameters Low Stress Nitride

Process Gases: N₂, NH₃, SiH₂Cl₂

Deposition Temperature: 750°C – 840°C

Deposition Pressure: 90 – 250 Mtorr

Thickness Uniformity:

Within a Wafer: 5% Guaranteed, Typical +/-3% excluding outer 6mm

Wafer to Wafer: 5% Guaranteed, Typical +/-4% based on center line values

Run to Run: 5% Guaranteed, Typical +/-3% based on averages of center line values

Load Size: 6“ Wafer, 100 Wafer Load <200MPA

Growth rate: 25 – 45 Angst./Min.

Process-Parameters POCL₃ Diffusion

Process Gases: N₂, O₂, POCL₃/N₂ Low

Deposition Temperature: 810°C – 1050°C

Athmospheric (All Guarantees on Single Crystal Silicon on less than 20 ohms per square doping)

Thickness Uniformity:

Within a Wafer: <+/-3% Guaranteed, Typical +/-1,5-2% excluding outer 6mm

Wafer to Wafer: <+/-3% Guaranteed, Typical +/-1,5% based on center line values

Run to Run: <+/-3% Guaranteed, Typical +/-2% based on averages of center line values

Load Size: 6“ Wafer, 150 Wafer Load

Process-Parameters

Low Stress Ramped Poly-Silicon

Process Gases: N₂, SiH₄

Deposition Temperature: 570°C – 635°C

Deposition Pressure: 100 – 250 Mtorr

Thickness Uniformity:

Within a Wafer: +/-4% Guaranteed, Typical 3% excluding outer 6mm

Wafer to Wafer: +/-4% Guaranteed, Typical 3% based on center line values

Run to Run: +/-4% Guaranteed, Typical 3% based on averages of center line values

Growth Rate: ~100 Angst./Min. at 624°C

Load Size: 6“ Wafer, 100 Wafer Load

Stress: 120 - 200MPA

Process-Parameters Low Stress Flat Poly-Silicon

Process Gases: N2, SiH4

Deposition Temperature: 570°C – 635°C

Deposition Pressure: 100 – 250 Mtorr

Thickness Uniformity:

Within a Wafer: +/-5% Guaranteed, Typical 3% excluding outer 6mm

Wafer to Wafer: +/-5% Guaranteed, Typical 3% based on center line values

Run to Run: +/-5% Guaranteed, Typical 3% based on averages of center line values

Growth Rate:~100 Angst./Min. at 624°C

Load Size: 6“ Wafer, 100 Wafer Load

Stress: < 20 MPA

Process-Parameters

Pyrogenic Oxidation with external Torch System

Process Gases: HCL, N2, O2 , H2 (optional O2 Low)

Deposition Temperature: 750°C – 1200°C

Athmospheric

Thickness Uniformity:

Within a Wafer: +/-3% Guaranteed, Typical +/-1% excluding outer 6mm

Wafer to Wafer: +/-3% Guaranteed, Typical +/-1% based on center line values

Run to Run: +/-3% Guaranteed, Typical +/-1% based on averages of center line values

Growth Rate: ~100 Angst./Min. at 624°C

Load Size: 6“ Wafer, 200 Wafer Load

Index of Refr.: 1.45 +/- 0.02