PlasmaTherm 790

 RIE/PECVD System

 

   This is a dual-chamber system. The left chamber is for reactive ion etching (RIE), and the right one is for plasma-enhanced chemical vapor deposition (PECVD). The two chambers share the same vacuum pump and RF generator, but have different gases. The RIE side has O₂, H₂, CF₄, CH₄, SF₆, CHF₃, and Ar. The PECVD side has N₂, N₂O, 2% SiH₄ in N₂, 2% SiH₄ in He, NH₃, CF₄, He, and Ar. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a butterfly valve between the chamber and the pump. The maximum RF power is 500 W. The PECVD side has a heater for depositing oxides and nitrides at 250-300^oC; there is no temperature control on the RIE side. All system functions are controlled from the computer. You should never need to touch the front panel controls unless the computer crashes (see the last section). The control program has both manual and automatic modes. You can program frequently used sequences and run them in automatic mode.

PlasmaTherm 720

 SLR Series RIE System

   Plasmatherm 720 SLR is a single-chamber reactive ion etching system with a load lock. It is designated for etching silicon using the following gases (chlorine chemistry): Cl₂, BCl₃, CCl₂F₂, H₂, Ar, CF₄, and O₂. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a butterfly valve between the chamber and the pump. The maximum RF power is 500 W, but practical considerations keep most etches to below 400 W. The substrate can be moderately heated ( ~30ºC) and chilled to well below 0ºC. All system functions are controlled from the computer. The program has both manual and automatic modes. Users can program frequently used sequences and run them in automatic mode.

TePla M4L Etcher

   The TePla M4L plasma etcher is a batch-mode plasma system for etch, strip, clean, and surface treatment. The etcher is designated for photoresist ashing, surface cleaning, and surface treatment and etching of plastic substrates. The following gases are installed: O₂, Ar, and CF₄. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a throttle valve between the chamber and the pump. The maximum RF power is 600 W, but use caution when etching plastic substrates. The etcher is equipped with a thermocouple to monitor the temperature. All system functions are controlled from the computer running on Windows NT. The program has both manual and automatic modes. Users should program frequently used sequences and run them in an automatic mode.

Astex ECR :

Electron Cyclotron Resonance Etcher

Super dense plasma etching of III-V’s Etch Gases : BCl₃, Cl₂, Ar, O₂, SF₆, CF₄