RAPID THERMAL PROCESSING

PROCESS  CAPABILITIES

   Polysilicon, Silicon Nitride, Phos Doped Polysilicon, Boron Doped Polysilicon, High Temperature  Silicon Dioxide (HTO),  Tungsten  Deposition, LTO (Low Temp. Oxide), LTO (Phos. Doped),  TEOS, Plasma CVD, BPSG System, SiPOS O₂ Doped Polysilicon.

SURFACE MODIFICATION MATERIALS / RESEARCH

Bench Top.

Temp. 100°C – 1250°C.

0°C – 200°C.

S Ramp Rate.

Mass Flow Control.

PC controlled.

Optical Pyrometer.

Turbomolecular Pump.

4 x 10-6 Torr.

CVD - UHVCVD

Load Lock.

Temp. 100°C – 1250°C.

0°C – 200°C.

S Ramp Rate.

Mass Flow Control.

PC controlled.

Optical Pyrometer.

Turbomolecular Pump.

1 x 10-6 Torr.

Cassette to Cassette.

FAST  FURNACE

1 - 3  TUBES.

Ramp Rate 0.1 - 50°C / sec.

Temp. 200°C – 1250°C.

Reduced Pressure 10-6 Torr.

100% H₂ Capable.

25 – 50 Wafers / Run.

4" - 10" Wafers.

Zero Particles.

Cantilever Integrated.

Automatic Load Door.

Cassette to Cassette.

Multiple Process.

Cabability.