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Home\Products\Semiconductor industry\Ceramics\Perfomanse SiC
CVD Silicon Carbide
Ultra-pure Performance SiC and Low Resistivity Performance SiC outlasts conventional materials - including other forms of silicon carbide - in today's extremely hostile manufacturing environments. The outstanding properties of Performance SiC include superior chemical and erosion resistance with phenomenal thermal properties. Utilizing a state-of-the-art chemical vapor deposition manufacturing system, Performance Materials produces chemical vapor deposition (CVD) silicon carbide that is superior to any silicon carbide available today.
The High-Productivity Advantages Of Performance SiC (extend the life of your manufacturing equipment, reduce downtime, eliminate contamination and increase yields – specify Performance SiC).
Benefits: outperforms traditional materials in chemical and plasma environments; lower costs of ownership; non-particle generating; faster throughputs and cycle times; higher yields; less downtime;
Features: ultra-pure 99.9995%; unparalleled wear and corrosion resistance; outstanding thermal conductivity; thermal shock resistant; phenomenal thermal conductivity; low CTE; dimensional stability; one of the best stiffness to weight ratios; fine grained microstructure; non-porous; theoretically dense; mirror-like surface finishes.
Performance Materials developed the CVD silicon carbide manufacturing technology to supply the high performance products required by the semiconductor industry. Our Performance SiC offers purity, stiffness, and dimensional stability ideal for the most demanding manufacturing environments.
CVD silicon carbide traditionally has been used in semiconductor processing applications, such as RTP and oxide etch chamber components, that can take advantage of the excellent thermal shock resistance of silicon carbide and its resistance to erosion by high energy plasmas.
Performance SiC, conductive CVD silicon carbide gives equipment manufacturers new options for materials to use in the processing chamber. The benefits of CVD silicon - carbidepurity, stiffness, chemical and oxidation resistance, ability to withstand thermal shock, and dimensional stability - now combine with low electrical resistance, opening up the door to new ways to process wafers.
Heating elements and susceptors made of low resistivity Performance SiC may improve heating uniformity inside the processing chamber. Other ways it may benefit the industry include chambers or liners with improved in situ clean uniformities, sputter targets, and all types of electrodes. Since CVD silicon carbide can be used in very thin sections, its low mass can improve throughput while it improves the use of space in crowded processing tools.
We believe low resistivity CVD silicon carbide will revolutionize the deposition and etch processes. With a combination of suitability for use in a wafer processing chamber and its electrical conductivity, this material opens up new ways to get energy to the wafer. Low resistivity Performance SiC is theoretically dense, intrinsically pure, has a high degree of chemical and process inertness, and has a bulk electrical resistivity of 0.012 ohm-cm.
Flokal’s low resistivity silicon carbide has consistent properties and is ideal for susceptors, processing chambers, gas distribution plates, edge rings, heaters, electrostatic chucks, or any application that requires electrical conductivity, wear resistance, and thermal shock resistance.
Applications
CVD Silicon Carbide (SiC) for Silicon Wafer Processing
Plasma etch processes, especially oxide etch, benefit from the high purity and etch resistance of CVD silicon carbide. Parts made of CVD silicon carbide last longer than those made of other materials, reducing warranty costs. End-users will appreciate that the high purity of CVD silicon carbide reduces the risk of contamination. Our recently developed low resistance CVD silicon carbide is electrically conductive and offers the same benefits of our standard grade of silcon carbide without sacrificing purity. Low resistivity silicon carbide is 99.9999% pure and has a bulk resistivity of 0.012ohm-cm. ideal for RF coupling in the chamber.
Single-wafer epitaxy processes benefit from the purity, corrosion resistance, and thermal properties of CVD SiC. Thermal shock resistance and stiffness maintain flatness even through extreme temperature cycling. Excellent thermal conductivity combines with the ultimate flat chuck to ensure uniform wafer heating.
RTP and single-wafer CVD processes also benefit from CVD SiC’s thermal shock resistance, ability to maintain flatness, and excellent thermal conductivity. Plasma processes may incorporate low resistance silicon carbide for susceptors, electrodes, or coupling components. CVD SiC can also be used for processing chambers and liners.
CVD Silicon Carbide has been used for focus rings in lithography tools; and for slip rings, and lift pins in many types of tools including wet and dry clean tools and ion implanters.
With low resistance CVD silicon carbide semiconductor manufacturers and equipment suppliers now have a material that can not only withstand the harsh environment of semiconductor processing but, also has the added benefit of being electrically conductive. Flokall's low resistivity silicon carbide has very consistent properties and is ideal for susceptors, processing chambers, gas distribution plates, edge rings and RF coupling in the chamber. Low resistance silicon carbide heaters are used in process chambers where there are requirements for rapid heating to elevated temperatures, low contamination and increased cycles. Low resistivity CVD silicon carbide is perfect for any application that requires electrical conductivity, wear resistance, and thermal shock resistance.
For any particular request please contact: info@flokal.eu
